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Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

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Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

Name: Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551
Brand: Original
Price: 1 USD

Quality Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551 for sale

Brand Name : Original

Model Number : MMBT5551

MOQ : 10 pcs

Price : Bargain

Payment Terms : T/T

Supply Ability : 1kk/months

Delivery Time : 1-7 days

Packaging Details : Carton

Description : Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt

Type : Bipolar Transistors - BJT

Name : Transistors

Part number : MMBT5551

Package : SOT-23-3

Small order : Welcome

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2N5551 / MMBT5551 NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon

SOT-23 - Power Transistor and Darlingtons

Part number

BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551

Electrical Characteristics

Mfr. #	MMBT5551
Mounting Style	SMD/SMT
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	160 V
Collector- Base Voltage VCBO	180 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.2 V
Maximum DC Collector Current	0.6 A
Pd - Power Dissipation	325 mW
Gain Bandwidth Product fT	300 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	80 at 10 mA, 5 V
DC Current Gain hFE Max	250 at 10 mA, 5 V
Product Type	BJTs - Bipolar Transistors

Electrical Characteristics (at Ta = 25°C unless otherwise specified)

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

Product Tags:

MMBT5551 High Voltage Transistor

NPN Amplifier High Voltage Transistor

NPN Silicon High Voltage Transistor

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551 Images

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